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 KSD1273
KSD1273
High hFE, AF Power Amplifier
* "Full PAK" Package for Simplified Mounting Only by a Screw, Requires no Insulator.
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 80 60 6 3 6 1 2 40 150 - 55 ~ 150 Units V V V A A A W W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCEO ICBO ICEO IEBO hFE VCE(sat) fT Parameter Collector-Emitter Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 25mA, IB = 0 VCB = 80V, IE = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A 30 500 Min. 60 Typ. Max. 100 100 100 2500 1 V MHz Units V A A A
hFE Classification
Classification hFE Q 500 ~ 1000 P 800 ~ 1500 O 1200 ~ 2500
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSD1273
Typical Characteristics
2.0 1.8
10000
VCE = 4V IB = 1.2mA IB = 1mA IB = 800uA IB = 600uA IB = 400uA
Ic[A], COLLECTOR CURRENT
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7
hFE, DC CURRENT GAIN
1000
100
IB = 200uA
8
9
10
10 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
10000
VCE(sat)[mV], SATURATION VOLTAGE
VCE = 4V
IC = 50 IB
125 C
o
hFE, DC CURRENT GAIN
1000
75 C 25 C
o
o
1000
25 C 75 C 125 C
O O
O
100
100
10
10 0.01
0.1
1
10
1 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
VBE(sat)[mV], SATURATION VOLTAGE
IC = 50 IB
IC = 40 IB
25 C
o o
1000
V BE(sat)
75 C 125 C
o
1
V BE(sat)
100
0.1
V CE(sat)
10 0.01
0.1
1
10
0.01 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Base Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSD1273
Typical Characteristics (Continued)
f = 1MHz
100
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
1000
Cob[pF], CAPACITANCE
100
10
10
1 1 10 100 1000
1 0.01
0.1
1
10
VCB[V], COLLECTO-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 7. Collector Output Capacitance
Figure 8. Current Gain Bandwidth Product
10
50
ICmax(pulse)
1mS
45
(1)
IC[A], COLLECTOR CURRENT
IC(max)
DC
PC[W], POWER DISSIPATION
40 35 30 25 20 15
(1): TC=Ta (2): With a 100x100x2mm AL Heat Sink (3): Without Heat Sink (PC=2W)
s 10m
1
(2)
10 5
(3)
0 25 50
o
0.1 1 10 100
0 75 100 125 150 175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TA[ C], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSD1273
Package Demensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3


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